• DocumentCode
    2860048
  • Title

    Integrated circuit D-MOS telephone crosspoint array

  • Author

    Moss, C. ; Cauge, T. ; Hodges, D.

  • Author_Institution
    Signetics Corp., Sunnyvale, CA, USA
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    32
  • Lastpage
    33
  • Abstract
    Double-diffused MOS transistors have desirable properties for use as an analog switch, or crosspoint, in space division telephone switching systems. This paper will cover a 8 × 2 D-MOS crosspoint array in which the analog switches have ON resistance of 12 ohms and OFF capacitance (source-drain) of 0.25 pF. Sixteen 12-ohm switches have been integrated with control circuitry on the same die, while typically maintaining -105 dB isolation and crosstalk.
  • Keywords
    Circuits; Crosstalk; Distortion; Frequency; Insertion loss; Latches; MOSFETs; Microwave devices; Switches; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155484
  • Filename
    1155484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2860048