Title :
High voltage SOS/MOS devices and circuit elements,
Author :
Splinter, M. ; Ronen, Ronny ; Tremain, R.
Author_Institution :
Rockwell International, Anaheim, CA, USA
Abstract :
SOS high-voltage MOS circuits, with drain breakdowns from 40-200 V, affording high density integration without increased processing complexity, will be discussed.
Keywords :
Circuits; Electric breakdown; Impurities; Low voltage; MOS devices; MOSFETs; Oxidation; Silicon; Space charge; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155535
