Title :
Microwave GaAs FETs: Reliability and reproducibility
Abstract :
Microwave gallium arsenide Schottky barrier field-effect transistors have great potential for use in both military and commercial systems. However, a number of problems remain to be solved before GaAs FETs can be considered systems ready. Methods of improving the reliability and reproducibility of these devices will be discussed.
Keywords :
Acoustical engineering; Bandwidth; Dynamic range; FETs; Gallium arsenide; Laboratories; Low-noise amplifiers; Microwave devices; Reproducibility of results; Schottky barriers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155550
