Photoresponse of Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Author

Yang, Po-Yu ; Lee, I-Che ; Chang, Chia-Tsung ; Wang, Chao-Lung ; Li, Hung-Hsien ; Huang, Yu-Chin ; Wu, Chun-Yu ; Wei, Yin-Chang ; Cheng, Huang-Chung ; Wang, Jyh-Liang ; Tsai, Wei-Chih

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e. 85 °C) hydrothermal method. The proposed devices demonstrated the high field-effect mobility of 9.07 cm²/V·s, low threshold voltage of 2.25 V, high on/off current ratio above 10⁶, and superior current drivability, attributed to the high-quality ZnO channel with single grain boundary. Moreover, a stable and repeatable operation of dynamic photoresponse is observed for the location-controlled hydrothermally grown ZnO BG-TFTs.

Keywords

II-VI semiconductors; crystal growth from solution; grain boundaries; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; bottom-gate thin-film transistors; current drivability; dynamic photoresponse; high field-effect mobility; location-controlled crystal grains; low-temperature hydrothermal method; single grain boundary; single vertical grain boundary; voltage 2.25 V; zinc oxide; Films; Grain boundaries; Green products; Lighting; Logic gates; Thin film transistors; Zinc oxide; hydrothermal method; thin-film transistors (TFTs); zinc oxide (ZnO);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991667

Filename

5991667