Title :
Dielectric and optical band gap studies of Cobalt-Manganese oxide nanoparticles at different temperatures
Author :
Indulal, C.R. ; Kumar, G. Sajeev ; Raveendran, R. ; Vaidyan, A.V.
Author_Institution :
Dept. of Phys., Kerala Univ., Kollam, India
Abstract :
Nanoparticles of Cobalt-Manganese oxides were prepared by chemical co-precipitation method. The samples were heated at 400, 600 and 800oC. The average particle size was determined from the X-ray line broadening. The diffractogram was compared with JCPDS data to identify the crystallographic phase and cubic structure of the particles. The FTIR studies have been used to confirm the metal oxide formation. The surface morphology and chemical compositions of the sample was verified using SEM and EDAX respectively. From the analysis of the absorption spectra, the direct band gap of the material was calculated. It has been found that with increasing frequency, the dielectric constant decreases. The high value of dielectric constant at low frequencies may mainly be due to the space charge polarization and rotational polarization.
Keywords :
Fourier transform spectra; X-ray chemical analysis; X-ray diffraction; cobalt; dielectric materials; energy gap; infrared spectra; manganese compounds; nanoparticles; optical constants; particle size; permittivity; precipitation (physical chemistry); scanning electron microscopy; surface morphology; Co-MnO; EDAX; FTIR study; SEM; X-ray line broadening; absorption spectra; chemical compositions; chemical coprecipitation; cobalt-manganese oxide; crystallographic phase; cubic structure; dielectric band gap; dielectric constant; diffractogram; metal oxide formation; nanoparticles; optical band gap; particle size; rotational polarization; space charge polarization; surface morphology; temperature 400 degC; temperature 600 degC; temperature 800 degC; Chemicals; Dielectrics; Materials; Metals; Optical polarization; Photonic band gap; X-ray scattering; Dielectric material; EDAX; Nanoparticles; Optical Band gap; SEM;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991677