Title :
I2L with self-aligned double-diffusion injector
Author :
Tokumaru, Y. ; Shinozaki, S. ; Nakai, Mitsuki ; Ito, Satoshi ; Nishi, Yoshio
Author_Institution :
Tokyo Shibaura Electric Co., Ltd., Kawasaki, Japan
Abstract :
A I2L structure embracing a self-aligned double diffusion injector will be described. A power delay product of 0.06 pJ/gate with a minimum delay of 10 ns at 80 μW have been obtained.
Keywords :
Boron; Circuits; Conductivity; Delay; Impurities; Indium tin oxide; Influenza; Silicon; Substrates; Tiles;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155587
