The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

Author

Juan, P.C. ; Chien, Y.S. ; Lin, J.Y. ; Cheng, C.P. ; Liu, C.H. ; Hsu, H.W. ; Chen, H.W. ; Huang, H.S.

Author_Institution

Dept. of Mater. Eng., Ming Chi Univ. of Technol., Taipei, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

In this paper, La-incorporated with HfO₂ thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.

Keywords

X-ray diffraction; crystallisation; hafnium compounds; lanthanum; sputtering; HfO₂; X-ray diffraction; crystallization temperature; electrical properties; lanthanum doping position; nano-Auger analysis; physical properties; thin film; Hafnium compounds; Silicon; Substrates; Thermal stability; X-ray diffraction; X-ray scattering; HfLaO; HfO2; X-ray diffraction (XRD); nono-Auger;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991692

Filename

5991692