• DocumentCode
    2861850
  • Title

    Fabrication and characterization of nano-structured aluminum-doped zinc oxide films

  • Author

    Kuo, Shou-Yi ; Lai, Fang-I ; Chen, Wei-Chun ; Lin, Woei-Tyng ; Huang, Hung-Wen ; Lee, Kang-Yuan

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Chungli, Taiwan
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Nanostructured ZnO samples on Si(100) and glass substrates have been synthesized by simple chemical solution method with post-thermal treatments. UV-vis spectrum, Hall measurement, and photoluminescence and scanning electron microscopy (SEM) have been used to characterize nanostructured ZnO thin films at various annealing temperatures. Post-thermal treatment does not only modify the surface morphology but also the intensity ratio of near-band-edge to green emission of ZnO samples. Meanwhile, the ZnO samples exhibited free exciton and very sharp exciton emissions at low temperatures. The average transmittance of nanostructured ZnO in the visible range was above 80 %, and optical band gap increased as increasing the annealing temperature, which might be explained by the Burstein-Moss effect. Experimental results reveal that post-thermal treatment play a key role in the fabrication of ZnO-based photonic devices.
  • Keywords
    II-VI semiconductors; aluminium; annealing; nanofabrication; nanostructured materials; photoluminescence; scanning electron microscopy; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; Burstein-Moss effect; Hall measurement; SEM; UV-vis spectrum; ZnO:Al; annealing temperatures; chemical solution method; glass substrates; green emission; nanostructured aluminum-doped zinc oxide films; optical band gap; photoluminescence; post-thermal treatments; scanning electron microscopy; surface morphology; Annealing; Doping; Optical films; Photonics; Resistance; Zinc oxide; AZO; post-thermal; sol-gel method;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991697
  • Filename
    5991697