High-performance Ni/SiO2/Si programmable metallization cell

Author

Lin, Kuan-Liang ; Tseng, Yi-Ming ; Lin, Jun-Hung ; Shieh, Jiann ; Lee, Yao-Jen ; Hou, Tuo-Hung ; Lei, Tan-Fu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Resistive switching in Ni/SiO₂/Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO₂ and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ~400, excellent data retention, and good immunity to read disturbance, are also revealed.

Keywords

nickel; random-access storage; silicon compounds; Joule-heating effect; Ni-SiO₂-Si; cathode forming filaments; cations migration; data retention; negative voltages; positive voltages; programmable metallization cell; resistive-switching random access memory; Cathodes; Nickel; Resistance; Silicon; Switches; Joule-heating effect; Ni filament; SiO2; programmable metallization cell; resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991718

Filename

5991718