DocumentCode
2862665
Title
Lifetime measurements of excited neutral donor states in GaAs detected by resonant elastic light scattering
Author
Allen, D.G. ; Kim, S.W. ; Sherwin, M.S.
Author_Institution
Dept. of Phys., Univ. of California Santa Barbara, Santa Barbara, CA
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Recovery of electrons from excited neutral donor states in GaAs is time-resolved using a novel optical readout technique and pulsed terahertz excitation. Long (0.1-1 mus) 2P state lifetimes are measured at various magnetic fields.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; light scattering; magnetic fields; GaAs; excited neutral donor states; lifetime measurements; magnetic fields; optical readout technique; pulsed terahertz excitation; resonant elastic light scattering; Electron optics; Gallium arsenide; Laser excitation; Lifetime estimation; Light scattering; Magnetic field measurement; Optical saturation; Optical scattering; Resonance light scattering; Stationary state; (140.2600) Free Electron Lasers; (300.6470) Spectroscopy, semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627700
Filename
4627700
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