Formation of SiGe Nanorod arrays by combining nanoshpere lithography and Au-assisted chemical etching

SiGe Nanorod (NR) arrays have been fabricated by combining nanosphere lithography and Au-assisted chemical etching. With controlling the etching rate and duration, the length of SiGe NRs can be tuned from 300 nm to 1 μnm. The morphology of SiGe NRs dramatically changed at different operating temperature. The results show a strong temperature dependence on fabrication of SiGe NRs. With TEM and SEM analysis, this work provides an effective approach to design the low-dimensional SiGe-based nanostructures for possible applications.