• DocumentCode
    2862848
  • Title

    A high performance 4K static RAM fabricated with an advanced MOS technology

  • Author

    Pashley, R. ; Owen, W. ; Kokkonen, Kimmo ; Jecmen, R. ; Ebel, A. ; Ahlquist, C. ; Schoen, P.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • Volume
    XX
  • fYear
    1977
  • fDate
    16-18 Feb. 1977
  • Firstpage
    22
  • Lastpage
    23
  • Keywords
    Active circuits; Circuit optimization; Isolation technology; MOS devices; Power dissipation; Power generation; Random access memory; Read-write memory; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1977.1155663
  • Filename
    1155663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2862848