An analysis of operational characteristics of high frequency inverters by EMTP

Author

Nagaoka, N. ; Fujii, S. ; Ametani, A.

Author_Institution

Doshisha Univ., Kyoto, Japan

fYear

1988

fDate

11-14 April 1988

Firstpage

731

Abstract

A novel model for MOSFETs and SITs (static induction transistors) is developed and used to analyze operational characteristics of high-frequency inverters consisting of MOSFET and SIT switching devices. Numerical analyses are carried out using EMPT, (electromagnetic transient analysis program). The gate control circuit and the switching devices are realized by the subprogram TACS of EMTP. The calculated results agree well with the experimental results, showing that as the load resistance becomes lower or the operational frequency becomes higher, the effect of the capacitance of the switching device and the internal inductance of the inverter increases.<>

Keywords

electromagnetic fields; insulated gate field effect transistors; invertors; switching circuits; EMTP; MOSFET; SIT; electromagnetic transient analysis program; gate control circuit; high frequency inverters; inductance; load resistance; operational characteristics; static induction transistors; subprogram TACS; switching devices; Capacitance; EMTP; Electromagnetic analysis; Frequency; Inductance; Inverters; MOSFETs; Numerical analysis; Switching circuits; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE

Conference_Location

Kyoto, Japan

Type

conf

DOI

10.1109/PESC.1988.18202

Filename

18202