• DocumentCode
    2863059
  • Title

    Fully ion implanted 4096-bit high speed DSA MOS RAM

  • Author

    Shimotori, K. ; Anami, K. ; Nagayama, Y. ; Okhura, I. ; Ohmori, Masato ; Nakano, T. ; Hayashi, Yasuhiro ; Tarui, Yoichiro

  • Author_Institution
    Mitsubishi Electric Corp., Hyogo, Japan
  • Volume
    XX
  • fYear
    1977
  • fDate
    16-18 Feb. 1977
  • Firstpage
    76
  • Lastpage
    77
  • Keywords
    Capacitance; Electric variables; FETs; Inverters; Ion implantation; Power dissipation; Propagation delay; Solid state circuits; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1977.1155678
  • Filename
    1155678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2863059