• DocumentCode
    2863482
  • Title

    Resistive switching characteristics of zinc oxide (ZnO) resistive RAM with Al metal electrode

  • Author

    Lin, Cheng-Li ; Tang, Chi-Chang ; Wu, Shu-Ching ; Yang, Syuan-Ren ; Lai, Yi-Hsiu ; Wu, Shich-Chuan

  • Author_Institution
    Dept. of Electron. Eng., Feng Chia Univ. (FCU), Taichung, Taiwan
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work investigates the characteristics of ZnO film as resistive RAM (RRAM) using Al electrode. Effects of oxygen composition in ZnO film is also studied using different Ar/O2 gas flow ratio. From the electrical characteristics, the resistance ratio (HRS/LRS) can be up to 1010, and the set and reset voltage is lower to 0.5V and 2.5V, respectively.
  • Keywords
    electrodes; random-access storage; zinc compounds; RRAM; ZnO; metal electrode; resistive RAM; resistive switching; zinc oxide; Argon; Films; Fluid flow; Leakage current; Random access memory; Resistance; Zinc oxide; RRAM; Resistive RAM; ZnO; switching cycles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991798
  • Filename
    5991798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2863482