• DocumentCode
    2863531
  • Title

    Study on sandwich structure of the transparent conducting oxide films prepared by electron beam evaporation at room temperature

  • Author

    Chiu, P.K. ; Cho, W.H. ; Chen, H.P. ; Hsiao, C.N. ; Yang, J.R.

  • Author_Institution
    Instrum. Technol. Res. Center, Nat. Appl. Res. Labs., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The sandwich structure of dielectric-metal-dielectric (DMD) was fabricated by ion beam-assisted deposition (IAD) under the oxygen atmosphere. The optical parameters were optimized by the admittance loci analysis to show that the transparent conducting oxide (TCO) film. By designing optical thickness of every ZnO layer and controlling the process parameters such as IAD power when fabricating DMD films at room temperature, we can obtain average transmittance of 90% in the visible region and bulk resistivity of 5×10-5 Ω-cm.
  • Keywords
    II-VI semiconductors; dielectric thin films; electrical resistivity; electron beam deposition; ion beam assisted deposition; light transmission; metal-insulator boundaries; optical films; sandwich structures; semiconductor thin films; zinc compounds; ZnO; admittance loci analysis; dielectric-metal-dielectric; electron beam evaporation; ion beam-assisted deposition; optical parameter; sandwich structure; transparent conducting oxide film; Nonhomogeneous media; Optical device fabrication; Optical films; Silver; Zinc oxide; DMD; E-Beam; IAD; Room temperature; ZnO;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991800
  • Filename
    5991800