DocumentCode
2863531
Title
Study on sandwich structure of the transparent conducting oxide films prepared by electron beam evaporation at room temperature
Author
Chiu, P.K. ; Cho, W.H. ; Chen, H.P. ; Hsiao, C.N. ; Yang, J.R.
Author_Institution
Instrum. Technol. Res. Center, Nat. Appl. Res. Labs., Hsinchu, Taiwan
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
The sandwich structure of dielectric-metal-dielectric (DMD) was fabricated by ion beam-assisted deposition (IAD) under the oxygen atmosphere. The optical parameters were optimized by the admittance loci analysis to show that the transparent conducting oxide (TCO) film. By designing optical thickness of every ZnO layer and controlling the process parameters such as IAD power when fabricating DMD films at room temperature, we can obtain average transmittance of 90% in the visible region and bulk resistivity of 5×10-5 Ω-cm.
Keywords
II-VI semiconductors; dielectric thin films; electrical resistivity; electron beam deposition; ion beam assisted deposition; light transmission; metal-insulator boundaries; optical films; sandwich structures; semiconductor thin films; zinc compounds; ZnO; admittance loci analysis; dielectric-metal-dielectric; electron beam evaporation; ion beam-assisted deposition; optical parameter; sandwich structure; transparent conducting oxide film; Nonhomogeneous media; Optical device fabrication; Optical films; Silver; Zinc oxide; DMD; E-Beam; IAD; Room temperature; ZnO;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991800
Filename
5991800
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