DocumentCode
286356
Title
Fundamental modelling of semiconductor power devices
Author
Johnson, C. Mark
Author_Institution
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
fYear
1993
fDate
34107
Firstpage
42522
Lastpage
42526
Abstract
With the introduction of relatively cheap and powerful computers and a range of comprehensive software packages, many device manufacturers now make extensive use of computer aided analysis in the design of new devices. Although these techniques are beginning to find application in large area power devices, there is still much work to be done in determining necessary and sufficient conditions for accurate and reliable simulation. Discretised versions of semiconductor device equations must be formulated consistently across the full coupled set of equations, and an initially adequate mesh generation may become invalid with development of space-charge regions during transients
Keywords
circuit CAD; digital simulation; mesh generation; power electronics; semiconductor device models; space charge; transients; computer aided analysis; mesh generation; necessary and sufficient conditions; semiconductor device equations; semiconductor power devices; simulation; software packages; space-charge regions; transients;
fLanguage
English
Publisher
iet
Conference_Titel
Coupling Electromagnetic to Other Fields, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
243266
Link To Document