• DocumentCode
    286356
  • Title

    Fundamental modelling of semiconductor power devices

  • Author

    Johnson, C. Mark

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
  • fYear
    1993
  • fDate
    34107
  • Firstpage
    42522
  • Lastpage
    42526
  • Abstract
    With the introduction of relatively cheap and powerful computers and a range of comprehensive software packages, many device manufacturers now make extensive use of computer aided analysis in the design of new devices. Although these techniques are beginning to find application in large area power devices, there is still much work to be done in determining necessary and sufficient conditions for accurate and reliable simulation. Discretised versions of semiconductor device equations must be formulated consistently across the full coupled set of equations, and an initially adequate mesh generation may become invalid with development of space-charge regions during transients
  • Keywords
    circuit CAD; digital simulation; mesh generation; power electronics; semiconductor device models; space charge; transients; computer aided analysis; mesh generation; necessary and sufficient conditions; semiconductor device equations; semiconductor power devices; simulation; software packages; space-charge regions; transients;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Coupling Electromagnetic to Other Fields, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    243266