DocumentCode :
2863676
Title :
A 4-GHz 12-W transistor amplifier utilizing a self-aligned bipolar structure
Author :
Tsuzuki, N. ; Saito, Yuya ; Sakai, Tadashi
Author_Institution :
Nippon Electric Co., Ltd., Kawasaki, Japan
Volume :
XX
fYear :
1977
fDate :
16-18 Feb. 1977
Firstpage :
162
Lastpage :
163
Keywords :
Bipolar transistors; Circuits; Electrodes; High power amplifiers; Impedance matching; Power amplifiers; Power generation; Silicon; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1977.1155715
Filename :
1155715
Link To Document :
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