• DocumentCode
    2864009
  • Title

    High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process

  • Author

    Campbell, Charles F. ; Kao, Ming-Yih ; Nayak, Sabyasachi

  • Author_Institution
    TriQuint Semiconductor, Defense Products and Foundry Services, 500 West Renner Rd., Richardson, TX, USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15µm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage amplifiers demonstrates 8–9W of output power for the balanced MMIC and 4.5–6W for the single-ended configuration. The associated power added (PAE) efficiency of both amplifiers exceeds 25% at Ka-band. The die sizes for the balanced and single-ended MMICs are 2.55×3.80mm2 and 1.39×3.42mm2 respectively.
  • Keywords
    FETs; Gallium arsenide; Gallium nitride; MMICs; Power amplifiers; Power generation; Power measurement; Gallium Nitride; MMIC; millimeter wave; power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259444
  • Filename
    6259444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2864009