Title :
Dielectrically isolated ICs made with preferential etching
Author :
Barth, P. ; Angell, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Keywords :
Bipolar transistors; Chemical processes; Dielectrics and electrical insulation; Doping profiles; Etching; Laboratories; Lapping; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155740
