Title :
Reliability of 6 inch 0.4 μm-gate PHEMT device
Author :
Yang, Bin ; Li, Weiqi ; Casterline, Ed
Author_Institution :
Anadigics Inc., Warren, NJ, USA
Abstract :
We have demonstrated that the 0.4 μm gatelength 6 inch PHEMT device has well behaved I-V characteristics. MTTF of the device is 2x10 6 hours at 1000 C channel temperature. The activation energy is calculated to be EA=1.15 eV. The failure mechanism of the PHEMT device is found to be the recovery of the surface damage induced by the gate SiN plasma etch process
Keywords :
failure analysis; high electron mobility transistors; semiconductor device reliability; 0.4 mum; 6 in; I-V characteristics; PHEMT; activation energy; failure mechanism; gate SiN plasma etch; reliability; surface damage; Costs; Fabrication; PHEMTs; Paper technology; Production; Silicon compounds; Substrates; Temperature; Testing; Thermal stresses;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902419