Production InGaP HBT reliability

Author

Cheskis, David ; Young, Alexander P. ; Bayraktaroglu, Burhan

Author_Institution

Anadigics Inc., Warren, NJ, USA

fYear

2000

fDate

2000

Firstpage

167

Lastpage

179

Abstract

We report on the long term reliability of InGaP emitter HBTs fabricated in our 150 mm production facility. The estimated median-time-to-failure of the devices fabricated in our manufacturing process is in excess of 10⁹ hours with an activation energy of E_A=1.8±0.2 eV. A lifetime of 3500 hours has been measured at a junction temperature, T_j, of 300°C and current density, J_c=25 kA/cm². These are the first reported reliability results of a 150 mm InGaP HBT manufacturing process. Additionally, we have measured the variability of the device reliability dependent upon epitaxial material supplier

Keywords

III-V semiconductors; failure analysis; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; semiconductor epitaxial layers; 150 mm; 300 C; 3500 hr; InGaP; InGaP HBT reliability; activation energy; current density; epitaxial material; junction temperature; lifetime; manufacturing process; median-time-to-failure; production facility; Current measurement; Fabrication; Fingers; Heterojunction bipolar transistors; Manufacturing processes; Materials reliability; Production; Temperature; Testing; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2000. Proceedings

Conference_Location

Seattle, WA

Print_ISBN

0-7908-0102-7

Type

conf

DOI

10.1109/GAASRW.2000.902428

Filename

902428