DocumentCode
2864474
Title
Performance comparison of MIM capacitors and metal finger capacitors for analog and RF applications
Author
Lim, Queennie S I ; Kordesch, Albert V. ; Keating, Richard A.
Author_Institution
Dept. of Electr., Electron. & Syst., Universiti Kebangsaan Malaysia, Selangor, Malaysia
fYear
2004
fDate
5-6 Oct. 2004
Firstpage
85
Lastpage
89
Abstract
In this work, we compare silicon nitride MIM capacitors to metal finger capacitors and clarify the performance and cost trade-offs. Our measurements show that MIM capacitors are superior to metal finger capacitors in terms of matching and process tolerance, but equivalent metal finger capacitors have higher Q, lower voltage coefficient and lower temperature coefficient.
Keywords
MIM devices; Q-factor; capacitors; thin film capacitors; MIM capacitors; Q factor; RF circuits; SiN; analog circuits; capacitor matching; integrated capacitors; interdigitated capacitors; metal finger capacitors; metal-insulator-metal capacitors; performance-cost trade-offs; process tolerance; temperature coefficient; voltage coefficient; CMOS process; Costs; Fingers; MIM capacitors; MOS capacitors; Metal-insulator structures; Parasitic capacitance; Q factor; Radio frequency; Switched capacitor circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
RF and Microwave Conference, 2004. RFM 2004. Proceedings
Print_ISBN
0-7803-8671-X
Type
conf
DOI
10.1109/RFM.2004.1411082
Filename
1411082
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