Ring oscillator with high speed XMOS transistors [cross gate MOSFETs]

Author

Tan, Philip Beow Yew ; Kordesch, Albert Victor ; Sidek, Othman

Author_Institution

Dept. of Integration & Device, Silterra Malaysia Sdn. Bhd, Kedah, Malaysia

fYear

2004

fDate

5-6 Oct. 2004

Firstpage

90

Lastpage

92

Abstract

In this paper, we demonstrate a new method of improving the conventional MOSFET (MOS) switching speed without changing the channel length and the technology used for fabrication. We add a 90 degree twisted poly gate to the original poly gate to form a cross gate MOSFET (XMOS) to improve the MOS transistor switching speed. The measurement results from a ring oscillator show that the gate delay of the MOS inverter and the XMOS inverter are 36.7 ps and 32.2 ps respectively. Hence, the MOS transistor switching speed is proven to improve up to 12.3% by applying the cross gate structure.

Keywords

MOSFET; logic gates; oscillators; 32.2 ps; 36.7 ps; MOS inverter gate delay; XMOS inverter gate delay; cross gate MOSFET; cross gate structure; high speed XMOS transistors; high switching speed MOSFET; right-angle twisted poly gate; ring oscillator; CMOS technology; Circuit optimization; Delay; Fabrication; Frequency; Inverters; MOSFET circuits; Parasitic capacitance; Ring oscillators; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference, 2004. RFM 2004. Proceedings

Print_ISBN

0-7803-8671-X

Type

conf

DOI

10.1109/RFM.2004.1411083

Filename

1411083