DocumentCode
2864518
Title
E2-PROM TV synthesizer
Author
Berenga, F. ; Daniele, V. ; Ferla, G. ; Torelli, Guido ; Mienner, W. ; Haraszti, I. ; Sieber, Peter
Author_Institution
SGS-ATES Electronic Components, Agrate Brianza, Italy
Volume
XXI
fYear
1978
fDate
15-17 Feb. 1978
Firstpage
196
Lastpage
197
Abstract
A nonvolatile memory cell using two polysilicon layers and a single-polarity supply, affording safe operation above 104write-erase cycles, will be described. A TV tuning circuit, implementing logic and memory on the same device, has been realized.
Keywords
Automatic control; Circuit optimization; Electrodes; Nonvolatile memory; Read only memory; Silicon; Synthesizers; TV; Threshold voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1978.1155768
Filename
1155768
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