A broadband Rx band noise reduction circuit with CMOS switch for multi-band power amplifier

Author

Kawamura, Yoshifumi ; Shinjo, Shintaro ; Iyomasa, Kazuhiro ; Hirobe, Masakazu ; Kato, Katsuya ; Takahashi, Yoshinori ; Yamabe, Shigeo ; Horiguchi, Kenichi ; Hieda, Morishige ; Yamanaka, Koji

Author_Institution

Mitsubishi Electr. Corp., Kanagawa, Japan

fYear

2015

fDate

25-28 Jan. 2015

Firstpage

165

Lastpage

167

Abstract

A broadband Rx band noise reduction circuit for multi-band power amplifiers (PA) is presented. The proposed Rx band noise reduction circuit consists of a Single-Pole Double-Throw (SPDT) switch and an LC resonator with resonant frequency is at the difference frequency between transmit and receive bands. By controlling the connection path of the LC resonator with the SPDT switch, the proposed Rx band noise reduction circuit achieves broadband Rx band noise suppression. In this paper, to clarify the impact of the proposed circuit, the proposed circuit is applied to a multi-band PA. As a result, the proposed Rx noise reduction circuit offers broadband out-of-band noise suppression and improved Rx noise power. In addition, the PA achieves more than 28.5 dBm of output power with power added efficiency (PAE) as high as 37% with a corresponding Rx-noise power of -136.5 dBm/Hz.

Keywords

CMOS integrated circuits; LC circuits; power amplifiers; resonators; switches; CMOS switch; LC resonator; broadband Rx band noise reduction circuit; broadband out-of-band noise suppression; multiband power amplifiers; power added efficiency; resonant frequency; single-pole double-throw switch; Broadband amplifiers; Noise; Noise reduction; Power amplifiers; Resonant frequency; Switching circuits; LC resonator; Rx band noise; frequency division duplex; noise reduction circuit; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2015 IEEE

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/RWS.2015.7129735

Filename

7129735