Title :
A monolithic integrated 4-GHz amplifier
Author_Institution :
Hewlett-Packard Laboratories, Santa Rosa, CA, USA
Abstract :
Monolithic GaAs MESFET integrated voltage amplifier stages with 7dB gain from dc to 4GHz, and 12dB gain from dc to 2.5GHz will be reported. A three-stage amplifier with variable frequency peaking shows a maximum of 28dB gain at 2GHz.
Keywords :
Aerospace electronics; Feedback; Frequency; Impedance; Linearity; MESFETs; Noise figure; Parasitic capacitance; Resistors; Testing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155782
