DocumentCode :
2864976
Title :
40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment method
Author :
Sedighi, Behnam ; Scheytt, J. Christoph
Author_Institution :
NICTA, University of Melbourne, VIC 3010, Australia
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
Design of a 40 Gb/s VCSEL driver IC capable of providing up to 10mA current to common-cathode VCSELs is presented. Using low-power bandwidth enhancement techniques, a prototype IC is successfully developed in 180-GHz SiGe BiCMOS technology. Measured results show 34 GHz of bandwidth, open eye diagram with rise/fall time below 10 ps, and power dissipation of 130 mW.
Keywords :
Bandwidth; BiCMOS integrated circuits; Capacitance; Inductors; Modulation; Vertical cavity surface emitting lasers; Integrated circuit; Laser driver; amplifier; peaking; wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259501
Filename :
6259501
Link To Document :
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