Title :
From planar to trench — Evaluation of ruggedness across various generations of power MOSFETs and implications on in-circuit performance
Author :
Shah, Hemal ; Oknaian, Steve ; Persson, Eric ; Huang, Rongjun
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
In this paper we compare the ruggedness of various generations of power MOSFETs using three criteria - single-pulse avalanche robustness, forward-biased safe-operation-area (FBSOA), and body-diode reverse recovery ruggedness. We observed that the trench-gate FETs are generally inferior to planar-gate counterparts in both FBSOA and avalanche capabilities; however, both trench and planar FETs show comparable performance under certain test conditions. Moreover, the trench FETs evaluated in this study are superior in reverse recovery ruggedness.
Keywords :
power MOSFET; FBSOA; body-diode reverse recovery ruggedness; forward- biased safe-operation-area; incircuit performance; power MOSFET; single-pulse avalanche robustness; trench-gate FET; Inductance; Logic gates; MOSFETs; Performance evaluation; Semiconductor optical amplifiers; Switches;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
Print_ISBN :
978-1-4244-8084-5
DOI :
10.1109/APEC.2011.5744641
