DocumentCode
2865324
Title
Punch-through MOSFET for high-speed logic
Author
Nakamura, T. ; Yamamoto, Manabu ; Ishikawa, Hiroshi ; Shinoda, M.
Author_Institution
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Volume
XXI
fYear
1978
fDate
15-17 Feb. 1978
Firstpage
22
Lastpage
23
Abstract
This paper will describe punch-through mode operation of a submicron gate MOSFET for high-speed and low-power logic ICs. Switching delays of 90ps and minimum power-delay products of 2fJ have been obtained with ring oscillators.
Keywords
Computer simulation; Delay; Electron devices; Inverters; Logic; MOSFET circuits; Ring oscillators; Switching circuits; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1978.1155814
Filename
1155814
Link To Document