• DocumentCode
    2865569
  • Title

    VMOS dynamic RAM

  • Author

    Hoffmann, K. ; Losehand, R. ; Zapf, K.

  • Author_Institution
    Siemans AG, Munich, Germany
  • Volume
    XXI
  • fYear
    1978
  • fDate
    15-17 Feb. 1978
  • Firstpage
    156
  • Lastpage
    157
  • Abstract
    This paper will discuss the application of VMOS technology in the design of one-transistor 150 μm2memory cells using existing photolithography. The development permits fabrication of a 64K RAM in a 16-pin package.
  • Keywords
    DRAM chips; Packaging; Parasitic capacitance; Power amplifiers; Power supplies; Random access memory; Read-write memory; Silicon; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1978.1155830
  • Filename
    1155830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2865569