DocumentCode
2866029
Title
High temperature characterization of implanted-emitter 4H-SiC BJT
Author
Tang, Yi ; Fedison, Jefferey B. ; Chow, T. Paul
Author_Institution
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2000
fDate
2000
Firstpage
178
Lastpage
181
Abstract
We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature
Keywords
bipolar transistors; silicon compounds; wide band gap semiconductors; SiC; high current gain; high-temperature characteristics; implanted-emitter 4H-SiC BJT; implanted-emitter npn bipolar transistor; negative temperature coefficient; turn-off time; Annealing; Bipolar transistors; Circuit testing; Doping; Frequency; Manufacturing; Silicon carbide; Substrates; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location
Ithaca, NY
ISSN
1529-3068
Print_ISBN
0-7803-6381-7
Type
conf
DOI
10.1109/CORNEL.2000.902536
Filename
902536
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