Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE

Author

Schaff, William J. ; Lu, Hai ; Hwang, Jeonghyun ; Wu, Hong

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2000

fDate

2000

Firstpage

225

Lastpage

231

Abstract

InN is predicted to exhibit higher saturation velocity than GaN for High Electron Mobility Transistor (HFET) applications. No field effect transistors have yet been made with InN channels because, to date, InN has been only prepared with undoped electron concentrations near 1×10²⁰ cm^-3. In this work growth of InN by the migration enhanced epitaxy (MEE) variation of the molecular beam epitaxy (MBE) technique has been performed. Electron densities down to lower 10¹⁸ cm^-3 have been obtained over a range of growth conditions with 300 K mobilities in the range of 300-500 cm²/Vs

Keywords

III-V semiconductors; electron density; electron mobility; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; plasma deposited coatings; semiconductor growth; wide band gap semiconductors; InN; electron concentration; electron mobility; heterojunction field effect transistor; high electron mobility transistor; indium nitride; migration enhanced epitaxy; plasma enhanced MBE growth; saturation velocity; Electron mobility; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Piezoelectric polarization; Plasma applications; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on

Conference_Location

Ithaca, NY

ISSN

1529-3068

Print_ISBN

0-7803-6381-7

Type

conf

DOI

10.1109/CORNEL.2000.902542

Filename

902542