Title :
Temperature dependence of quantum dot homogeneous linewidth
Author :
Berry, J.J. ; Stevens, Martin J. ; Mirin, R.P. ; Silverman, K.L.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO
Abstract :
We examine the temperature dependence of the ground state homogeneous linewidth in InGaAs/GaAs quantum dots. Measurements using a high-resolution spectral hole burning technique are performed on quantum dots in a semiconductor waveguide.
Keywords :
III-V semiconductors; gallium arsenide; ground states; indium compounds; optical hole burning; optical materials; optical waveguides; semiconductor device measurement; semiconductor quantum dots; thermo-optical devices; InGaAs-GaAs; ground state; high-resolution spectral hole burning technique; quantum dot homogeneous linewidth; semiconductor waveguide; temperature dependence; Frequency; Laser excitation; Optical waveguides; Performance evaluation; Pollution measurement; Probes; Quantum dots; Temperature dependence; Temperature distribution; Time measurement; (250.0250); (300.6250); (300.6470);
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627931
