• DocumentCode
    2866945
  • Title

    Gate associated transistor

  • Author

    Kondo, Hiroki ; Yukimoto, Y. ; Shirahata, Koichi

  • Author_Institution
    Mitsubishi Electric Corp., Itami, Japan
  • Volume
    XXII
  • fYear
    1979
  • fDate
    14-16 Feb. 1979
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    A bipolar transistor, using the cascade connection of a bipolar transistor and JFET to obtain high frequency and high voltage power transistors, will be discussed. Transistors with VCEO of 500V, a cutoff frequency of 80MHz and a current rating of 10-20A were fabricated.
  • Keywords
    Bipolar transistors; Conductivity; Cutoff frequency; Diffusion processes; Electron tubes; Equivalent circuits; FETs; Iron; Pulse amplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1979.1155912
  • Filename
    1155912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2866945