Title :
Optimization of MOS capacitor based short flow for monitoring ion implantation-induced charging
Author :
Brozek, Tomasz ; Norton, Cory
Author_Institution :
Motorola Inc., Chandler, AZ, USA
Abstract :
Application of MOS antenna capacitors for charging assessment is a widely recognized approach among both process engineers and tool manufacturers. This paper presents results of optimizing methodology to monitor charging caused by ion beams using on wafer MOS capacitors. Main factors considered during the optimization process include simplicity, testability, and sensitivity. Short flow manufacturing of monitor wafers was developed to support “stick-and-test” approach
Keywords :
MOS capacitors; ion implantation; process monitoring; surface charging; MOS capacitor; antenna effect; ion implantation; optimization; oxide degradation; process monitoring; short flow manufacturing; stick-and-test method; wafer charging; Degradation; Electric breakdown; Electron beams; Ion beams; Ion implantation; MOS capacitors; Monitoring; Optimization methods; Surface charging; Testing;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-5921-6
DOI :
10.1109/ASMC.2000.902616
