• DocumentCode
    2868618
  • Title

    High voltage, new driver IC technique based on silicon wafer direct-bonding (SDB)

  • Author

    Nakagawa, Akio ; Watanabe, Kiminori ; Yamaguchi, Yoshihiro ; Tsukakoshi, Tsuneo

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • fYear
    1988
  • fDate
    11-14 April 1988
  • Firstpage
    1325
  • Abstract
    Two fundamental techniques are presented for high-voltage driver ICs: dielectric isolation based on silicon wafer direct-bonding (DISDB) and a high-voltage junction termination technique (SIPOS resistive field plate). The SIPOS plate shields the external electric field influence on breakdown voltage. DISDB integrates low-voltage logic and high-voltage (500 V) devices and has three structural variations corresponding to different application fields.<>
  • Keywords
    power integrated circuits; silicon; 500 V; DISDB; HVIC; SDB; SIPOS resistive field plate; Si; breakdown voltage; dielectric isolation; electric field; high-voltage junction termination; logic; power IC; silicon wafer direct-bonding; Breakdown voltage; Conductivity; Dielectric devices; Dielectric substrates; Diffusion bonding; Etching; Low voltage; MOSFETs; Silicon; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
  • Conference_Location
    Kyoto, Japan
  • Type

    conf

  • DOI
    10.1109/PESC.1988.18278
  • Filename
    18278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868618