Title :
Development of a RF waveform stress test procedure for GaN HFETs subjected to infinite VSWR sweeps
Author :
McGenn, W. ; Choi, H. ; Lees, J. ; Uren, M.J. ; Benedikt, J. ; Tasker, P.J.
Author_Institution :
Cardiff School of Engineering, Cardiff University, CF24 3QR, UK
Abstract :
An RF waveform stress test has been developed in order to assess device degradation caused by the infinite VSWR conditions that could result from the removal of a protection isolator. The proposed stress test involves both DC and RF characterization of a device, before and after an RF stressing mechanism is applied. The procedure was first applied with the device being stressed whilst driving into its optimum impedance and secondly with the device being stressed by one of the three potential failure regions that result from an infinite VSWR sweep.
Keywords :
Gallium nitride; HEMTs; Impedance; MODFETs; Power generation; Radio frequency; Stress; Gallium Nitride; HEMTs; microwave amplifiers; reliability;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259725
