Title :
1.3 μm quantum-dot laser linewidth rebroadening
Author :
Chu, Y. ; Thompson, M.G. ; Penty, R.V. ; White, I.H. ; Melnik, S. ; Hegarty, S.P. ; Huyet, G. ; Hopfer, F. ; Laemmlin, M. ; Bimberg, D. ; Kovsh, A.R.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge
Abstract :
The linewidth enhancement factor of a quantum-dot laser is observed to increase substantially at high bias currents. This is explained as a consequence of slow carrier relaxation and plasma dependent refractive index.
Keywords :
aluminium compounds; carrier relaxation time; gallium arsenide; laser beams; quantum dot lasers; refractive index; Al0.35Ga0.65As-GaAs; linewidth enhancement factor; linewidth rebroadening; plasma-dependent refractive index; quantum-dot laser; slow carrier relaxation; wavelength 1.3 mum; Fiber lasers; Frequency modulation; High speed optical techniques; Laser feedback; Laser modes; Optical feedback; Optical mixing; Quantum dot lasers; Threshold current; Waveguide lasers; (140.3380) Laser materials; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628107
