Title :
A Dual-Band CMOS Transceiver for 3G TD-SCDMA
Author :
Zhenbiao Li ; Wenhai Ni ; Jie Ma ; Ming Li ; Dequn Ma ; Dong Zhao ; Mehta, J. ; Hartman, D. ; Xianfeng Wang ; O, K.K. ; Kai Che
Author_Institution :
Comlent Commun., Shanghai
Abstract :
A TD-SCDMA transceiver is integrated in a 0.18mum CMOS process. The RX achieves 62dB voltage gain, 3.2dB NF, and -14.5dBm IIP3. The TX achieves 3.7% EVM with -46dBc ACLR at +4.4dBm maximum output power. On-chip fractional-N PLL has 0.85deg jitter and spurs below 77dB. The RX and TX consume 95mW and 158mW, respectively.
Keywords :
3G mobile communication; CMOS integrated circuits; code division multiple access; transceivers; 0.18 micron; 158 mW; 3.2 dB; 3G TD-SCDMA; 62 dB; 95 mW; CMOS process; dual-band CMOS transceiver; on chip fractional-N PLL; time division synchronous code division multiple access; Analog integrated circuits; Digital integrated circuits; Dual band; Frequency; Gain control; Low pass filters; Switches; Time division synchronous code division multiple access; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0852-0
DOI :
10.1109/ISSCC.2007.373435
