Phosphor-free all-semiconductor white-light light-emitting devices

Author

Huang, Chi-Feng ; Yeh, Dong-Ming ; Lu, Chih-Feng ; Chen, Horng-Shyang ; Tang, Tsung-Yi ; Huang, Jeng-Jie ; Yang, Chih-Chung

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Phosphor-free all-semiconductor white-light devices are fabricated by coating CdSe/ZnS nano-crystals on blue/green two-wavelength LEDs for converting blue photons into red light. The LEDs are implemented by stacking two different types of InGan/GaN quantum wells.

Keywords

III-V semiconductors; cadmium compounds; gallium compounds; indium compounds; light emitting diodes; nanofabrication; nanostructured materials; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; CdSe-ZnS; InGaN-GaN; nanocrystals; phosphor-free all-semiconductor LED; quantum well stacking technique; two-wavelength emission spectrum; white-light light-emitting devices; Coatings; Color; Fabrication; Gallium nitride; Geometry; Light emitting diodes; Nanoscale devices; Quantum well devices; Stacking; Zinc compounds; 230.3670 Light-emitting diodes; 230.5590 Quantum-well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628177

Filename

4628177