• DocumentCode
    2870522
  • Title

    High power quantum cascade lasers by MOVPE

  • Author

    Bour, David ; Diehl, L. ; Troccoli, Mariano ; Corzine, Scott ; Zhu, Junan ; Hofler, G. ; Assayag, O. ; Lee, Bang-Wook ; Loncar, Marko ; Smith, Dante J. ; Capasso, Federico

  • Author_Institution
    Agilent Labs., Palo Alto, CA
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Lattice-matched and strain-compensated InGaAs-AlInAs quantum cascade lasers have been grown by MOVPE, which operate continuously at room temperature and have threshold less than 2 kA/cm2.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser beams; quantum cascade lasers; vapour phase epitaxial growth; InGaAs-AlInAs; MOVPE; high power lasers; lattice matched laser structures; quantum cascade lasers; strain compensation; temperature 293 K to 298 K; Contacts; Epitaxial growth; Epitaxial layers; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Optical materials; Quantum cascade lasers; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628188
  • Filename
    4628188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2870522