Title :
Processing tolerance and trim considerations in monolithic FET amplifiers
Author :
Degenford, J. ; Cohn, M. ; Freitag, Ron ; Boire, D.
Author_Institution :
Westinghouse Electric Corp., Baltimore, MD, USA
Abstract :
This paper will report on the application of direct ion implantation into unbuffered GaAs substrates for FETs and monolithic power amplifiers. The effects of processing tolerances and compensating trim adjustments on the performance of a 2-stage 1W octave bandwidth amplifier will be analyzed.
Keywords :
Capacitance; Costs; Doping; FETs; Frequency; Gallium arsenide; Geometry; Heat sinks; Microstrip; Transmission line measurements;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156136
