DocumentCode
2870876
Title
One Mb bubble memory with support electronics
Author
Nicolino, S.
Author_Institution
Intel Magnetics, Inc., Santa Clara, CA, USA
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
112
Lastpage
113
Abstract
A 1Mb bubble memory system, including the bubble device, made on garnet material, and five silicon support devices, made with bipolar, CMOS, VMOS, NMOS and HMOS processes, will be discussed.
Keywords
Coils; Detectors; Error analysis; Iron; Low voltage; Magnetic films; Optical films; Read-write memory; Sputtering; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156141
Filename
1156141
Link To Document