Title :
A 45ns fully-static 16K MOS ROM
Author :
Wong, Johnson ; Siu, P. ; Ebel, M.
Author_Institution :
Synertek, Inc., Santa Clara, CA, USA
Abstract :
This report will discuss the design of a ROM that makes extensive use of small signal amplification and 0V threshold devices to reduce active power to 350mW and standby power to 75mW. The device is contact mask programmable and has a die size of 20,300 mil2.
Keywords :
Circuits; Power dissipation; Read only memory; Semiconductor device packaging; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156168
