DocumentCode :
2871541
Title :
F1: Non-Volatile Memory Circuit Design and Technology
fYear :
2007
fDate :
11-15 Feb. 2007
Firstpage :
637
Lastpage :
643
Keywords :
CMOS technology; Circuit synthesis; Costs; Flash memory; Material storage; Nonvolatile memory; Random access memory; Solid state circuits; Stacking; Technological innovation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
1-4244-0853-9
Electronic_ISBN :
0193-6530
Type :
conf
DOI :
10.1109/ISSCC.2007.373559
Filename :
4242530
Link To Document :
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