Design Considerations of a 15-kV SiC IGBT-Based Medium-Voltage High-Frequency Isolated DC–DC Converter

A dual active bridge (DAB) is a zero-voltage switching (ZVS) high-power isolated dc-dc converter. The development of a 15-kV SiC insulated-gate bipolar transistor switching device has enabled a noncascaded medium voltage (MV) isolated dc-dc DAB converter. It offers simple control compared to a cascaded topology. However, a compact-size high frequency (HF) DAB transformer has significant parasitic capacitances for such voltage. Under high voltage and high dV/dT switching, the parasitics cause electromagnetic interference and switching loss. They also pose additional challenges for ZVS. The device capacitance and slowing of dV/dT play a major role in deadtime selection. Both the deadtime and transformer parasitics affect the ZVS operation of the DAB. Thus, for the MV-DAB design, the switching characteristics of the devices and MV HF transformer parasitics have to be closely coupled. For the ZVS mode, the current vector needs to be between converter voltage vectors with a certain phase angle defined by deadtime, parasitics, and desired converter duty ratio. This paper addresses the practical design challenges for an MV-DAB application.