Wavelet-based grid generation toward full-wave physical analysis of microwave/mm-wave transistors

A new wavelet-based simulation approach for the analysis and simulation of microwave/mm-wave transistors is presented. For the first time in the literature, Daubechies-base wavelet approach is applied to semiconductor equations to generate a nonuniform mesh. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. The procedure of nonuniform mesh generation is described in detail by simulating a MESFET. It is shown that good accuracy can be achieved while compressing the number of unknown by 70%.