DocumentCode
287226
Title
Investigation on IGBT switching process with variable gate charge current
Author
Abraham, L. ; Bramm, G. ; Reddig, M.
Author_Institution
Federal Armed Forces Univ., Munich, Germany
fYear
1993
fDate
13-16 Sep 1993
Firstpage
323
Abstract
Turn on and turn off switching characteristic of an IGBT can be widely influenced by the shape of gate current. The paper treats measurements of switching behaviour with extremely high gate charging currents at turn on and turn off for inductive load with free wheeling diode. The gate drive for high slew rates must be designed in respect of HF rules, and the commutation circuit should be laid out with very low inductance. The test circuits are described. The measurements are demonstrated and compared with computer simulations
Keywords
commutation; insulated gate bipolar transistors; power electronics; semiconductor device models; switching circuits; IGBT switching process; commutation circuit; computer simulations; free wheeling diode; gate charging currents; inductive load; slew rates; switching behaviour; turn off switching characteristic; turn on; variable gate charge current;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
264935
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