Title :
Two-dimensional analysis of SIT (static induction transistor) during switching process
Author :
Grecki, M. ; Napieralski, A.
Author_Institution :
Inst. of Electron., Tech. Univ. of Lodz, Poland
Abstract :
In order to understand the behaviour of the SIT a two-dimensional physical model of its semiconductor structure has been developed. The investigation focused on transient states with an external load circuit. Also the bipolar mode was investigated in order to show the influence of positive gate bias on the voltage drop in the ON-state and on the turn-off time. Static and dynamic power losses are analysed in order to compare the SIT switching performances with those of other commonly used power devices (VDMOS, bipolar transistors, IGBT)
Keywords :
field effect transistors; losses; power transistors; semiconductor device models; semiconductor switches; ON-state; SIT; bipolar mode; dynamic power losses; external load circuit; positive gate bias; semiconductor structure; static induction transistor; static power losses; switching process; transient states; turn-off time; two-dimensional physical model; voltage drop;
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
